US Patent 7682985 Dual doped polysilicon and silicon germanium etch

Patent 7682985 was granted and assigned to Lam Research on March, 2010 by the United States Patent and Trademark Office.

Overview Structured Data Issues Contributors Activity

Is a

Patent

Patent attributes

Current Assignee

Lam Research

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

7682985

Date of Patent

March 23, 2010

Patent Application Number

10803342

Date Filed

March 17, 2004

Patent Primary Examiner

‌

Anita K Alanko

Patent abstract

A method for etching a stack with at least one silicon germanium layer over a substrate in a processing chamber is provided. A silicon germanium etch is provided. An etchant gas is provided into the processing chamber, wherein the etchant gas comprises HBr, an inert diluent, and at least one of O2 and N2. The substrate is cooled to a temperature below 40° C. The etching gas is transformed to a plasma to etch the silicon germanium layer.