US Patent 7682979 Phase change alloy etch

Patent 7682979 was granted and assigned to Lam Research on March, 2010 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

Lam Research

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

7682979

Date of Patent

March 23, 2010

Patent Application Number

11479303

Date Filed

June 29, 2006

Patent Primary Examiner

‌

Allan Olsen

Patent abstract

A method of forming devices is provided. A phase change layer is provided. The phase change layer is etched by providing an etch gas comprising a bromine containing compound and forming a plasma from the etch gas. The phase change layer is of a material that may be heated by a current and then when cooled, either forms an amorphous material or a crystalline material, depending on how fast the material is cooled. In addition, the amorphous material has a resistance at least several times greater than the crystalline material.