Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yoshio Ozawa0
Katsuyuki Sekine0
Masayuki Tanaka0
Ryota Fujitsuka0
Akihito Yamamoto0
Daisuke Nishida0
Katsuaki Natori0
Date of Patent
March 23, 2010
0Patent Application Number
117275360
Date Filed
March 27, 2007
0Patent Primary Examiner
Patent abstract
A method of manufacturing a semiconductor device comprising a first insulating film formed on a semiconductor substrate, a charge storage layer formed on the first insulating film, a second insulating film formed on the charge storage layer, and a control electrode formed on the second insulating film, wherein forming the second insulating film comprises forming an insulating film containing silicon using source gas not containing chlorine, and forming an insulating film containing oxygen and a metal element on the insulating film containing silicon.
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