Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
March 9, 2010
Patent Application Number
11525529
Date Filed
September 22, 2006
Patent Primary Examiner
Patent abstract
A non-volatile memory point including a floating gate placed above a semiconductor substrate, the floating gate comprising active portions insulated from the substrate by thin insulating layers, and inactive portions insulated from the substrate by thick insulating layers that do not conduct electrons, the active portions being principally P-type doped, and the inactive portions comprising at least one N-type doped area forming a portion of a PN junction.
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