Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Tae Hoon Kim0
Date of Patent
March 9, 2010
0Patent Application Number
117699820
Date Filed
June 28, 2007
0Patent Primary Examiner
Patent abstract
A nonvolatile memory device and its fabrication method of the present invention may ensure a margin of the threshold drive voltage during a design process of the device by forming a resistance layer determining phase of ReRAM along an upper edge of a lower electrode, and improve operating characteristics of the device.
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