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US Patent 7666728 Manufacturing method of semiconductor device

Patent 7666728 was granted and assigned to Renesas Technology Corp on February, 2010 by the United States Patent and Trademark Office.

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Patent
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Current Assignee
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
76667281
Patent Inventor Names
Yutaka Takeshima1
Kota Funayama1
Shuji Matsuo1
Yasuko Yoshida1
Katsuhiro Uchimura1
Date of Patent
February 23, 2010
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Patent Application Number
120285931
Date Filed
February 8, 2008
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Patent Primary Examiner
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Chuong A Luu
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Patent abstract

A method of manufacture of a semiconductor device includes forming a gate insulating film and gate electrode made of polycrystalline silicon over a semiconductor substrate; implanting ions into the semiconductor substrate to form a semiconductor region as a source or drain; forming a cobalt film and a titanium nitride film over the semiconductor substrate to cover the gate electrode; carrying out annealing to cause a reaction between Co and Si and the semiconductor region to form a CoSi layer; carrying out wet cleaning to remove the titanium nitride film and unreacted cobalt film to leave the CoSi layer over the gate electrode and semiconductor region; carrying out annealing to cause a reaction between the CoSi layer and the gate electrode and semiconductor region to form a CoSi2 layer; carrying out HPM cleaning; and forming over the semiconductor substrate a silicon nitride film by low-pressure CVD to cover the gate electrode.

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