Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yoshiyuki Shibata0
Date of Patent
February 16, 2010
0Patent Application Number
120769900
Date Filed
March 26, 2008
0Patent Primary Examiner
Patent abstract
A first DRAM section including a first memory cell having a first capacitance and a second DRAM section including a second memory cell having a second capacitance different from the first capacitance are provided on the same semiconductor substrate.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
