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US Patent 7660144 High-performance one-transistor memory cell

Patent 7660144 was granted and assigned to Micron Technology on February, 2010 by the United States Patent and Trademark Office.

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Patent Citations Received
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US Patent 11948637 Memory cells, memory cell arrays, methods of using and methods of making
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Patent abstract

A memory cell embodiment includes an access transistor having a floating node, and a diode connected between the floating node and a diode reference potential line. The diode includes an anode, a cathode, and an intrinsic region between the anode and the cathode. A charge representative of a memory state of the memory cell is held across the intrinsic region of the diode.

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Patent Inventor Names
Arup Bhattacharyya0
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US Patent 07660144 High-performance one-transistor memory cell US Patent 7660144 High-performance one-transistor memory cell

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Patent Number
076601440
Patent Number
76601440
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=076601440
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Infobox
Is a
Patent
Patent
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Current Assignee
Micron Technology
Micron Technology
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
076601440
Date of Patent
February 9, 2010
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Patent Application Number
114773150
Date Filed
June 28, 2006
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=076601440
Patent Primary Examiner
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Pho M Luu
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Website URL
https://pdfpiw.uspto.gov/.piw?Docid=07660144
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 US Patent 07660144 High-performance one-transistor memory cell

Infobox
Is a
Patent
Patent
Current assignee
Micron Technology
Micron Technology
Patent jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent number
07660144
Date of patent
February 9, 2010
Patent application number
11477315
Date Filed
June 28, 2006
Patent primary examiner
‌
Pho M Luu

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