Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
February 2, 2010
Patent Application Number
11489475
Date Filed
July 20, 2006
Patent Primary Examiner
Patent abstract
A method for programming a multi-level nitride storage memory cell capable of storing different programming states corresponding to multiple different threshold voltage levels includes providing a variable resistance capable of providing a plurality of different resistance values; connecting a drain side of the nitride storage memory cell to a selected one of the plurality of resistance values that corresponds to one of the multiple threshold voltage levels; and programming the nitride storage memory cell to store one of the program states corresponding to the one of the threshold voltage levels by applying a programming voltage to the drain side through the selected resistance.
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