Patent attributes
Method and system for determining semiconductor characteristics. In a specific embodiment, the present invention provides a method for determining one or more characteristics of a partially processed integrated circuit. The method includes a step for providing a substrate material. The method further includes a step for forming at least one opening within the substrate material. The opening can be characterized by an opening characteristic that includes a depth and an opening width associated with an unknown volume. The method includes a step for providing fill material. Additionally, the method includes a step for processing the fill material to cause a first portion of the fill material to enter the opening and occupy an entirety of the unknown volume associated with the opening characteristic while a second portion of the fill material remains outside of the unknown volume. Moreover, the method includes a step for processing the second portion of the fill material using one or more processes to determine a spatial characteristic associated with the unknown volume.