Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Dureseti Chidambarrao0
Date of Patent
February 2, 2010
Patent Application Number
11163908
Date Filed
November 3, 2005
Patent Primary Examiner
Patent abstract
A finFET and its method for fabrication include a gate electrode formed over a channel region of a semiconductor fin. The semiconductor fin has a crystallographic orientation and an axially specific piezoresistance coefficient. The gate electrode is formed with an intrinsic stress determined to influence, and preferably optimize, charge carrier mobility within the channel region. To that end, the intrinsic stress preferably provides induced axial stresses within the gate electrode and semiconductor fin channel region that complement the axially specific piezoresistance coefficient.
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