Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Petar Atanackovic0
Date of Patent
February 2, 2010
0Patent Application Number
112535250
Date Filed
October 19, 2005
0Patent Primary Examiner
Patent abstract
Compositions comprising a single-phase rare-earth dielectric disposed on a substrate. Embodiments of the present invention provide the basis for high-K gate dielectrics in conventional integrated circuits and high-K buried dielectrics as part of a semiconductor-on-insulator wafer structure.
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