Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Toshiharu Furukawa0
David V. Horak0
Mark C. Hakey0
Steven J. Holmes0
Charles W. Koburger, III0
Date of Patent
January 26, 2010
0Patent Application Number
118664710
Date Filed
October 3, 2007
0Patent Primary Examiner
Patent abstract
A method and structure for forming a semiconductor structure. A semiconductor substrate is provided. A trench is formed within the semiconductor substrate. A first layer of electrically insulative material is formed within the trench. A first portion and a second portion of the first layer of electrically insulative material is removed. A second layer of electrically insulative material is selectively grown on the first layer comprising the removed first portion and the removed second portion.
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