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Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Takehiro Yoshida0
Date of Patent
January 19, 2010
0Patent Application Number
115417900
Date Filed
October 3, 2006
0Patent Primary Examiner
Patent abstract
A nitride semiconductor free-standing substrate formed of a free-standing nitride-based compound semiconductor crystal that has a variation in lattice constant of ±12 ppm or less.
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