Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Shing-Ann Lo0
Ta-Hung Yang0
Hsu-Sheng Yu0
Date of Patent
January 19, 2010
0Patent Application Number
115345830
Date Filed
September 22, 2006
0Patent Primary Examiner
Patent abstract
A method of forming a dielectric layer is provided. A first dielectric layer is formed on a substrate having metal layers formed thereon. The first dielectric layer includes overhangs in the spaces between two neighboring metal layers and voids under the overhangs. The first dielectric layer is partially removed to cut off the overhangs and expose the voids and therefore openings are formed. A second dielectric layer is formed on the dielectric layer to fill up the opening.
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