Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Akira Isikawa0
Date of Patent
January 19, 2010
0Patent Application Number
121830870
Date Filed
July 31, 2008
0Patent Primary Examiner
Patent abstract
A manufacturing method of a semiconductor device which can decrease the degradation of an element due to plasma in the LDD formation process is provided. The degradation of an element due to plasma is decreased by forming an element having an LDD structure according to a manufacturing method of a semiconductor device using a hard mask. Covering the substrate by an electrically conductive film allover, the density of electric charge accumulated in a gate electrode in the plasma process such as anisotropic etching can be reduced, and the degradation due to plasma process can be reduced.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
