Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
January 5, 2010
Patent Application Number
11926552
Date Filed
October 29, 2007
Patent Primary Examiner
Patent abstract
A semiconductor device with high reliability is provided using an SOI substrate. When the SOI substrate is fabricated by using a technique typified by SIMOX, ELTRAN, or Smart-Cut, a single crystal semiconductor substrate having a main surface (crystal face) of a {110} plane is used. In such an SOI substrate, adhesion between a buried insulating layer as an under layer and a single crystal silicon layer is high, and it becomes possible to realize a semiconductor device with high reliability.
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