US Patent 7642181 LOCOS self-aligned twin well with a co-planar silicon surface
Patent 7642181 was granted and assigned to Atmel Corporation on January, 2010 by the United States Patent and Trademark Office.
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A method and system for providing a twin well in a semiconductor device is described. The method and system include masking a first portion of the device such that a second portion of the device is exposed. A sacrificial layer has a first portion on the first portion of the device and a second portion on the second portion of the device. In one aspect, an oxidation stop layer may be below the sacrificial layer. The method and system include implanting a first well in the second portion of the device, exposing the first portion of the device after the first well is implanted, and oxidizing the second portion of sacrificial layer after the exposing. The method and system further include implanting the second well in the first portion of the device after the oxidizing and planarizing the device after the second well is implanted.
US Patent 07642181 LOCOS self-aligned twin well with a co-planar silicon surface US Patent 7642181 LOCOS self-aligned twin well with a co-planar silicon surface
US Patent 07642181 LOCOS self-aligned twin well with a co-planar silicon surface
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