Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Eun-Mi Kim0
Yong-Tae Cho0
Date of Patent
January 5, 2010
0Patent Application Number
116448800
Date Filed
December 26, 2006
0Patent Primary Examiner
Patent abstract
A method of fabricating a semiconductor device includes forming an isolation structure in a substrate to define an active region, forming a recess mask pattern over the isolation structure and the active region, etching the isolation structure exposed by the recess mask pattern to a certain depth, etching the substrate to form a recess pattern, and forming a gate electrode over the recess pattern.
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