Patent attributes
A manufacturing method for a display device having a first conductive type thin film transistor and a second conductive type thin film transistor, comprising the steps of: in formation regions for a first conductive type thin film transistor and a second conductive type thin film transistor forming a semiconductor layer, a first insulating film covering the semiconductor layer and a gate electrode disposed on the first insulating film so as to intersect the semiconductor layer, on substrate having first conductive type impurity regions on both outer sides of a channel region of the semiconductor layer below the gate electrode forming a second insulating film, in the second insulating film and the first insulating film forming a contact hole for a drain electrode and a source electrode, in the formation region for the second conductive type thin film transistor forming electrodes and a second conductive type impurity region.
