US Patent 7635651 Method of smoothening dielectric layer
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Patent Inventor Names
Chyi-Tsong Ni0
Jun Wu0
Shih-Chi Lin0
Wen-Long Lee0
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Patent abstract
A method of smoothening a dielectric layer. First, a substrate is provided. Next, a dielectric layer is formed on the semiconductor substrate. Finally, the dielectric layer is smoothened by a plasma treatment employing a silane based gas and a nitrogen based gas.
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US Patent 07635651 Method of smoothening dielectric layer US Patent 7635651 Method of smoothening dielectric layer
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Patent Number
076356510
Patent Number
76356510
Edits on 23 Sep, 2022
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Patent Jurisdiction
Patent Number
076356510
Date of Patent
December 22, 2009
0Patent Application Number
112086120
Date Filed
August 23, 2005
0Official Website
Patent Primary Examiner
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US Patent 07635651 Method of smoothening dielectric layer
Infobox
Is a
Patent jurisdiction
Patent number
07635651
Date of patent
December 22, 2009
Patent application number
11208612
Date Filed
August 23, 2005
Patent primary examiner
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