A semiconductor storage device in which a read sense circuit stable for the fluctuation in manufacturing process and environmental conditions can be realized and the read access time can be shortened is provided. A sense circuit for reading a memory cell characterized in that a flowing current is varied depending on stored data and a voltage applied through a word line includes: an inverter; a first capacitor provided so as to be electrically connected between an input of the inverter and a bit line to which the memory cell is connected; a first transistor which short-circuits an input and an output of the inverter; a second capacitor for supplying charge to the first capacitor; and second transistors, wherein an input potential of the inverter is increased or decreased according to the current of the memory cell and is then amplified to be latched as a logic value.