Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Guobiao Zhang0
Date of Patent
December 15, 2009
Patent Application Number
11162262
Date Filed
September 2, 2005
Patent Primary Examiner
Patent abstract
The present invention discloses an N-ary mask-programmable memory (N-MPM). N-MPM cells can have N cell-states, with N>2. N-MPM cells could be geometry-defined, junction-defined, or both. Based on an nF-opening process (n≧1), partial-contacts with feature size <1F can be implemented with an nF-opening mask with feature size ≧1F. N can be a non-integral power of 2. In this case, each memory cell represents fractional bits.
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