US Patent 7622763 Field effect transistor and method for manufacturing same

Patent 7622763 was granted and assigned to Japan Science and Technology Agency on November, 2009 by the United States Patent and Trademark Office.

Overview Structured Data Issues Contributors Activity

Is a

Patent

Patent attributes

Current Assignee

Japan Science and Technology Agency

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

7622763

Date of Patent

November 24, 2009

Patent Application Number

10565624

Date Filed

July 28, 2004

Patent Primary Examiner

‌

Sue Purvis

Patent abstract

A field effect transistor comprises a SiC substrate 1, a source 3a and a drain 3b formed on the surface of the SiC substrate 1, an insulating structure comprising an AlN layer 5 formed in contact with the SiC surface and having a thickness of one molecule-layer or greater, and a SiO2 layer formed thereon, and a gate electrode 15 formed on the insulation structure. Leakage current can be controlled while the state of interface with SiC is maintained in a good condition.