Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
November 17, 2009
Patent Application Number
11872195
Date Filed
October 15, 2007
Patent Primary Examiner
Patent abstract
In one embodiment of the invention, in a semiconductor laser in which a first conductivity type lower cladding layer, an active layer that includes a quantum well layer, and a second conductivity type upper cladding layer are formed in this order on a semiconductor substrate, a dopant concentration of the lower cladding layer is not more than 4.0×1017/cm3, and a resonator length is not less than 1500 μm.
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