Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kuang Yeu Hsieh0
ChiaHua Ho0
Erh-Kun Lai0
Date of Patent
November 10, 2009
0Patent Application Number
115520320
Date Filed
October 23, 2006
0Patent Primary Examiner
Patent abstract
A memory device that selectably exhibits first and second logic levels. A first conductive material has a first surface with a first memory layer formed thereon, and a second conductive material has a second surface with a second memory layer formed thereon. A connective conductive layer joins the first and second memory layers and places the same in electrical contact. The structure is designed so that the first memory layer has a cross-sectional area less than that of the second memory layer.
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