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US Patent 7615774 Aluminum free group III-nitride based high electron mobility transistors

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Patent attributes

Patent Jurisdiction

United States Patent and Trademark Office

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Patent Number

Patent Inventor Names

Adam William Saxler0

Date of Patent

November 10, 2009

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Patent Application Number

111185750

Date Filed

April 29, 2005

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Patent Citations Received

US Patent 12015075 Methods of manufacturing high electron mobility transistors having a modified interface region

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US Patent 11837457 Packaging for RF transistor amplifiers

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US Patent 11842937 Encapsulation stack for improved humidity performance and related fabrication methods

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US Patent 11887945 Semiconductor device with isolation and/or protection structures

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US Patent 12009417 High electron mobility transistors having improved performance

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Patent Primary Examiner

0

Patent abstract

Aluminum free high electron mobility transistors (HEMTs) and methods of fabricating aluminum free HEMTs are provided. In some embodiments, the aluminum free HEMTs include an aluminum free Group III-nitride barrier layer, an aluminum free Group III-nitride channel layer on the barrier layer and an aluminum free Group III-nitride cap layer on the channel layer.

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