US Patent 7615164 Plasma etching methods and contact opening forming methods
Patent 7615164 was granted and assigned to Micron Technology on November, 2009 by the United States Patent and Trademark Office.
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The invention includes etching and contact opening forming methods. In one implementation, a plasma etching method includes providing a bottom powered plasma chamber that includes a plasma generating electrode powerable at different first and second frequencies, with the first frequency being lower than the second frequency. A substrate is positioned over the electrode. A plasma is generated over the substrate with the electrode from a first applied power at the first frequency and a second applied power at the second frequency. A ratio of the first applied power to the second applied power is from 0 to 0.25 or at least 6.0. Material is etched from the substrate with the plasma.
US Patent 07615164 Plasma etching methods and contact opening forming methods US Patent 7615164 Plasma etching methods and contact opening forming methods
US Patent 07615164 Plasma etching methods and contact opening forming methods
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