Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
November 3, 2009
Patent Application Number
11272878
Date Filed
November 15, 2005
Patent Primary Examiner
Patent abstract
A Schottky barrier diode includes a first semiconductor layer and a second semiconductor layer successively formed above a semiconductor substrate with a buffer layer formed between the first and second semiconductor layers and the semiconductor substrate. A Schottky electrode and an ohmic electrode spaced from each other are formed on the second semiconductor layer, and a back face electrode is formed on the back face of the semiconductor substrate. The Schottky electrode or the ohmic electrode is electrically connected to the back face electrode through a via penetrating through at least the buffer layer.
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