US Patent 7612399 Semiconductor integrated circuit devices
Patent 7612399 was granted and assigned to SAMSUNG ELECTRONICS CO., LTD. on November, 2009 by the United States Patent and Trademark Office.
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A semiconductor integrated circuit device includes a first interlayer insulation film having a contact therein. The contact has an upper surface and including a void therein having an open upper portion. The device further includes a plasma damage reduction unit including a lower electrode conformably on the void of the contact and on the upper surface of the contact, a dielectric film on the lower electrode, and an upper electrode on the dielectric film. The thickness of the portion of the dielectric film in the void is smaller than the thickness of the portion of the dielectric film on the upper surface of the contact.
US Patent 07612399 Semiconductor integrated circuit devices US Patent 7612399 Semiconductor integrated circuit devices
US Patent 07612399 Semiconductor integrated circuit devices
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