Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yoshitaka Kinoshita0
Hidenori Kamei0
Date of Patent
October 13, 2009
0Patent Application Number
115214910
Date Filed
September 15, 2006
0Patent Primary Examiner
Patent abstract
A semiconductor light-emitting device includes: a substrate; a first conductivity type layer formed on the substrate and including a plurality of group III-V nitride semiconductor layers of a first conductivity type; an active layer formed on the first conductivity type layer; and a second conductivity type layer formed on the active layer and including a group III-V nitride semiconductor layer of a second conductivity type. The first conductivity type layer includes an intermediate layer made of AlxGa1−x−yInyN (wherein 0.001≦x<0.1, 0<y<1 and x+y<1).
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