Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hiroshi Morioka0
Masanori Terahara0
Rintaro Suzuki0
Date of Patent
October 13, 2009
Patent Application Number
11287340
Date Filed
November 28, 2005
Patent Citations Received
Patent Primary Examiner
Patent abstract
The method for fabricating a semiconductor device comprises the steps of: forming on a silicon substrate 10 a hard mask 20 of a silicon oxide film 12, and a silicon nitride film 14 having a width smaller than a width of the silicon oxide film 12; etching the silicon substrate 10 with the hard mask 20 as the mask to form a trench 26 for defining an active region 24 in the silicon substrate 10; and forming a silicon oxide film 28 on the silicon substrate 10 with the trench 26 formed in.
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