Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
James Pan0
Date of Patent
October 13, 2009
0Patent Application Number
115525820
Date Filed
October 25, 2006
0Patent Primary Examiner
Patent abstract
Methods are provided for fabricating a stress enhanced MOS transistor. One such method comprises the steps of depositing and patterning a layer of sacrificial material to form a dummy gate electrode and replacing the dummy gate electrode with a stressed gate electrode. After the stressed gate electrode has been formed by a replacement process, a stress liner is deposited overlying the stressed gate electrode.
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