Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yasunori Okayama0
Date of Patent
October 13, 2009
0Patent Application Number
118483820
Date Filed
August 31, 2007
0Patent Primary Examiner
Patent abstract
A semiconductor device includes an anti-fuse portion and a memory cell portion each including a MOSFET structure having a gate insulating film formed on a semiconductor substrate and a gate electrode formed on the gate insulating film; wherein a depletion ratio in the gate electrode of the anti-fuse portion is different from the depletion ratio in the gate electrode of the memory cell portion, and the depletion ratio in the gate electrode of the anti-fuse portion is lower than the depletion ratio in the gate electrode of the memory cell portion.
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