US Patent 7599403 Superluminescent diode and method of manufacturing the same

Patent 7599403 was granted and assigned to Electronics and Telecommunications Research Institute on October, 2009 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

Electronics and Telecommunications Research Institute

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

7599403

Date of Patent

October 6, 2009

Patent Application Number

11635195

Date Filed

December 7, 2006

Patent Primary Examiner

‌

Armando Rodriguez

Patent abstract

A 1.55 μm SLD having a laser diode (LD) region and a semiconductor optical amplifier (SOA) region, and a method of fabricating the same, are disclosed. The SLD includes: an InP substrate having a LD region and a SOA region for amplifying light emitted from the LD region; an optical waveguide having a BRS (buried ridge strip) structure having an active layer of resonant strip pattern formed on the InP substrate and extending from the SOA region to the LD region; a first electrode formed on the active layer in the SOA region, a second electrode formed on the active layer in the LD region and electrically isolated from the first electrode; and a current blocking region interposed between the first electrode and the second electrode in order to electrically isolate the first electrode and the second electrode from each other.