Patent 7598809 was granted and assigned to Silicon Storage Technology on October, 2009 by the United States Patent and Trademark Office.
An RF power amplifier includes a plurality of amplifier cells. Each amplifier cell includes a bipolar transistor and a base circuit that comprises an RF coupling capacitor, a bias resistor, a base capacitor, and a base resistor. The base circuit transmits DC bias current and an RF signal to the base of the bipolar transistor to provide a selectable frequency response. The base circuit may be implemented using a structure of stacked capacitors.