Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Tomonobu Tsuchiya0
Akihisa Terano0
Shigehisa Tanaka0
Date of Patent
September 29, 2009
0Patent Application Number
118410100
Date Filed
August 20, 2007
0Patent Primary Examiner
Patent abstract
A nitride semiconductor laser which features low resistance and high reliability. A buried layer is formed by selective growth and the shape of a p-type cladding layer is inverted trapezoidal so that the resistance of the p-type cladding layer and that of a p-type contact layer are decreased. For long-term reliability of the laser, the buried layer is a high-resistance semi-insulating layer which suppresses increase in leak current.
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