Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Ichiro Yamamoto0
Date of Patent
September 29, 2009
0Patent Application Number
112051410
Date Filed
August 17, 2005
0Patent Primary Examiner
Patent abstract
A P-type MOSFET 120 includes a semiconductor substrate (N-well 102b); a gate insulating film formed on the semiconductor substrate, composed of a high-dielectric-constant film 108 which contains a silicate compound containing a first element selected from the group consisting of Hf, Zr and any of lanthanoids, together with N; a gate electrode formed on the gate insulating film, and is configured by a polysilicon film 114 containing a P-type impurity; and a blocking oxide film 110 formed between the gate insulating film and the gate electrode, blocking a reaction between the first element and the polysilicon film 114, and having a relative dielectric constant of 8 or above.
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