Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Tetsumi Tominaga0
Teruhisa Fukuda0
Date of Patent
September 22, 2009
0Patent Application Number
115292910
Date Filed
September 29, 2006
0Patent Primary Examiner
Patent abstract
A method for fabricating a semiconductor element includes the steps of: providing a semiconductor wafer; forming an oxide layer on the semiconductor wafer; carrying out a high-temperature thermal treatment to the semiconductor wafer at least once, wherein the high-temperature thermal treatment comprises a final high-temperature treatment, which is carried out lastly as the high-temperature thermal treatment; lowering a temperature of the semiconductor wafer, following the final high-temperature treatment, to a predetermined lower temperature; and exposing the semiconductor wafer to an oxidizing atmosphere after the temperature lowering process.
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