Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Tadashi Kai0
Yoshiaki Fukuzumi0
Yoshihisa Iwata0
Date of Patent
September 22, 2009
Patent Application Number
11935923
Date Filed
November 6, 2007
Patent Citations Received
Patent Primary Examiner
Patent abstract
A magnetic memory device comprising, a magneto-resistance effect element that is provided at an intersection between a first write line and a second write line. And the magneto-resistance effect element having, an easy axis that extends in a direction of extension of the first write line, and a first conductive layer for electrical connection to the magneto-resistance effect element, the first conductive layer having sides which are in flush with sides of the magneto-resistance effect element.
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