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US Patent 7589379 Power semiconductor and method of fabrication

Patent 7589379 was granted and assigned to Cambridge Semiconductor Limited on September, 2009 by the United States Patent and Trademark Office.

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Patent Citations Received
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US Patent 11955782 System and method for fracturing of underground formations using electric grid power
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US Patent 11939852 Dual pump VFD controlled motor electric fracturing system
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US Patent 11913315 Fracturing blender system and method using liquid petroleum gas
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Patent Inventor Names
Florin Udrea0
Gehan Anil Joseph Amaratunga0
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Patent abstract

This invention is generally concerned with power semiconductors such as power MOS transistors, insulated gate by bipolar transistors (IGBTs), high voltage diodes and the like, and methods for their fabrication.

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US Patent 07589379 Power semiconductor and method of fabrication US Patent 7589379 Power semiconductor and method of fabrication

Infobox
Patent Number
075893790
Patent Number
75893790
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=075893790
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Infobox
Is a
Patent
Patent
0
Current Assignee
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Cambridge Semiconductor Limited
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
075893790
Date of Patent
September 15, 2009
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Patent Application Number
109367210
Date Filed
September 9, 2004
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=075893790
Patent Primary Examiner
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Edward Wojciechowicz
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Website URL
https://pdfpiw.uspto.gov/.piw?Docid=07589379
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 US Patent 07589379 Power semiconductor and method of fabrication

Infobox
Is a
Patent
Patent
Current assignee
‌
Cambridge Semiconductor Limited
Patent jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent number
07589379
Date of patent
September 15, 2009
Patent application number
10936721
Date Filed
September 9, 2004
Patent primary examiner
‌
Edward Wojciechowicz

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