Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hans Juergen Walitzki0
Date of Patent
September 15, 2009
Patent Application Number
11376520
Date Filed
March 14, 2006
Patent Citations Received
Patent Primary Examiner
Patent abstract
A thermionic or thermotunneling gap diode device consisting of two silicon electrodes maintained at a desired distance from one another by means of spacers. These spacers are formed by oxidizing one electrode, protecting certain oxidized areas and removing the remainder of the oxidized layer. The protected oxidized areas remain as spacers. These spacers have the effect of maintaining the electrodes at a desired distance without the need for active elements, thus greatly reducing costs.
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