Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
September 8, 2009
Patent Application Number
11850130
Date Filed
September 5, 2007
Patent Primary Examiner
Patent abstract
A nonvolatile memory device comprises a first voltage generation unit, a second voltage generation unit, a first circuit block, and a discharge unit. The first voltage generation unit generates a first voltage with a first magnitude. The second voltage generation unit generates a second voltage with a second magnitude greater than the first magnitude. The first circuit block selectively receives the first voltage or the second voltage through an input node. The discharge unit discharges the input node between a time point where the input node has been charged with the second voltage and a time point where the input node receives the first voltage.
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