Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
September 8, 2009
Patent Application Number
11446151
Date Filed
June 5, 2006
Patent Primary Examiner
Patent abstract
In a semiconductor device and method of manufacturing the semiconductor device, a punch-through prevention film pattern and a channel film pattern are formed on an insulation layer. The punch-through prevention pattern and the insulation layer may include nitride and oxide, respectively. The punch-through prevention pattern is located under the channel pattern.
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