US Patent 7583542 Memory with charge storage locations

A method for operating a memory device includes selecting a cell comprising an array of word lines, selecting a word line within said array and applying an operating voltage to said selected word line. A shielding voltage is also applied to the closest adjacent facing word line of said selected word line. This may prevent unintended, program, read, or erase of said unselected word line. The remainder of unselected word lines can be floated.