Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Fu-Liang Yang0
Chien-Chao Huang0
Date of Patent
September 1, 2009
0Patent Application Number
112439590
Date Filed
October 5, 2005
0Patent Primary Examiner
Patent abstract
A semiconductor structure having a recessed active region and a method for forming the same are provided. The semiconductor structure comprises a first and a second isolation structure having an active region therebetween. The first and second isolation structures have sidewalls with a tilt angle of substantially less than 90 degrees. The active region is recessed. By recessing the active region, the channel width is increased and device drive current is improved.
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