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US Patent 7579650 Termination design for deep source electrode MOSFET

Patent 7579650 was granted and assigned to International Rectifier (company) on August, 2009 by the United States Patent and Trademark Office.

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Patent abstract

A power semiconductor device that includes a plurality of source trenches that extend to a depth below the gate electrodes and a termination region that includes a termination trench that is as deep as the source trenches.

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