US Patent 7579590 Method of measuring thin layers using SIMS

Patent 7579590 was granted and assigned to Freescale Semiconductor on August, 2009 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

Freescale Semiconductor

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

75795900

Patent Inventor Names

David D. Sieloff0

Zhi-Xiong (Jack) Jiang0

Date of Patent

August 25, 2009

Patent Application Number

118885760

Date Filed

August 1, 2007

Patent Primary Examiner

‌

Bernard E Souw

Patent abstract

A method for measuring the thickness of a layer is provided, comprising (a) providing a structure (101) comprising a first layer disposed on a second layer; (b) impinging (103) the structure with a first ion beam comprising a first isotope, thereby sputtering off a portion of the first layer which contains a second isotope and exposing a portion of the second layer; and (c) determining (105) the thickness of the first layer by measuring the amount of the second isotope which is sputtered off.