Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Koji Dairiki0
Shunpei Yamazaki0
Tamae Takano0
Date of Patent
August 18, 2009
0Patent Application Number
116016990
Date Filed
November 20, 2006
0Patent Primary Examiner
Patent abstract
In a manufacturing process of a semiconductor device using a substrate having low heat resistance, such as a glass substrate, there is provided a method of efficiently carrying out crystallization of a semiconductor film and gettering treatment of a catalytic element used for the crystallization by a heating treatment in a short time without deforming the substrate. A heating treatment method of the present invention is characterized in that a light source is controlled in a pulsed manner to irradiate a semiconductor film, so that a heating treatment of the semiconductor film is efficiently carried out in a short time, and damage of the substrate due to heat is prevented.
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