US Patent 7575976 Localized spacer for a multi-gate transistor

Patent 7575976 was granted and assigned to Intel on August, 2009 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

Intel

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

7575976

Date of Patent

August 18, 2009

Patent Application Number

11729033

Date Filed

March 28, 2007

Patent Primary Examiner

‌

Fernando L Toledo

Patent abstract

In one embodiment, the present invention includes a double gate transistor having a silicon fin formed on a buried oxide layer and first and second insulation layers formed on a portion of the silicon fin, where at least the second insulation layer has a pair of portions extending onto respective first and second portions of the silicon fin to each act as a self-aligned spacer structure. Other embodiments are described and claimed.